Beilstein J. Nanotechnol.2023,14, 834–849, doi:10.3762/bjnano.14.68
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Keywords: angledependency; argon; contamination; energy dependency; ion bombardment; low energy; molecular dynamics; silicon; simulations; water; Introduction
Low-energy ion beams offer substantial improvements and possibilities to reduce the damage production on the surface of samples [1][2]. In recent
energy variations on the sputtering processes, while discussing the angledependency for some conditions. To perform such analysis, we selected several angles and energies. For the impact energy, we selected 50, 100, 200, 300, 400, and 500 eV to stay in the ultralow-energy domain. For the angles, we
increase the yield, and we can still observe some angledependency, with a maximum sputtering yield for angles between 60° and 75°. A difference appears above 80°, where the sharp decrease observed for silicon particles is less pronounced for water. In our simulations, the water layer is not renewed
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Figure 1:
Representations of the contaminated sample under argon irradiation for an incidence angle of 45° an...
Beilstein J. Nanotechnol.2022,13, 986–1003, doi:10.3762/bjnano.13.86
sputtered largely depends on the incidence angle. This fraction is the largest for incidence angles between 70 and 80° defined with respect to the sample surface. Overall, it changes from 25% to 65%.
Keywords: angledependency; argon ions; contamination; focused ion beams; ion bombardment; low energy
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Figure 1:
Fit of the DFT data for the argon–silicon potential in (a) the 1–5 Å region, with the potential wel...